Topological to trivial insulating phase transition in stanene

stanene 的电子性质， graphene 的 Sn 对应物理论上用第一原则的模拟被学习。对一个 out-of-plane 电场或由量监禁效果导致的小绝缘阶段转变拓扑被预言。结果加亮潜力在门电压使用 stanene nanoribbons 控制了无驱散的基于纺纱的设备并且被用来将最小的 nanoribbon 宽度放为如此的设备，它典型地是约 5 nm。

Electronic properties of stanene, the Sn counterpart of graphene are theoretically studied using first-principles simulations. The topological to trivial insulating phase transition induced by an out-of-plane electric field or by quantum confinement effects is predicted. The results highlight the potential to use stanene nanoribbons in gate-voltage controlled dissipationless spin-based devices and are used to set the minimal nanoribbon width for such devices, which is typically approximately 5 nm.