NOR logic function of a bendable combination of tunneling field-effect transistors with silicon nanowire channels

在这研究，我们与不均匀地做的 p +-i-n+ 硅 nanowire (SiNW ) 建议通道地效果晶体管(TFET ) 的新奇联合可弯曲的底层上的隧道。在平行的二 n 隧道 SiNW-TFETs (NWTFET ) 和在系列的二 p 隧道 NWTFET 的联合是操作一二输入也不逻辑门。有 n 隧道和 p 隧道的部件 NWTFET 展出 69 和 53 mV  的次于最低限度的秋千(SS )

In this study, we propose a novel combination of tunneling field-effect transistors （TFETs） with asymmetrically doped p^＋-i-n^＋ silicon nanowire （SiNW） channels on a bendable substrate. The combination of two n-channel SiNW-TFETs （NWTFETs） in parallel and two p-channel NWTFETs in series operates as a two-input NOR logic gate. The component NWTFETs with the n- and p-channels exhibit subthreshold swings （SSs） of 69 and 53 mV·dec^-1, respectively, and the on/off current ratios are -106. The NOR logic operation is sustainable and reproducible for up to 1,000 bending cycles with a narrow transition width of -0.26 V. The mechanical bendability of the bendable NWTFETs shows that they are stable and have good fatigue properties. To the best of our knowledge, this is the first study on the electrical and mechanical characteristics of a bendable NOR logic gate composed of NWTFETs.