摘要
Van der Waals （vdW） heterojunctions are equipped to avert dangling bonds due to weak, inter-layer vdW force, and ensure strong in-plane covalent bonding for two-dimensional layered structures. We fabricated four heterojunctions devices of different layers based on p-type distorted 1T-MX2 ReSe2 and n-type hexagonal MoS2 nanoflakes, and measured their electronic and optoelectronic properties. The device showed a high rectification coefficient of 500 for the diode, a high ON/OFF ratio and higher electron mobility for the field-effect transistor （FET） compared with the individual components, and a high current responsivity （Rλ） and external quantum efficiency （EQE） of 6.75 A/W and 1,266%, respectively, for the photodetector.
Van der Waals （vdW） heterojunctions are equipped to avert dangling bonds due to weak, inter-layer vdW force, and ensure strong in-plane covalent bonding for two-dimensional layered structures. We fabricated four heterojunctions devices of different layers based on p-type distorted 1T-MX2 ReSe2 and n-type hexagonal MoS2 nanoflakes, and measured their electronic and optoelectronic properties. The device showed a high rectification coefficient of 500 for the diode, a high ON/OFF ratio and higher electron mobility for the field-effect transistor （FET） compared with the individual components, and a high current responsivity （Rλ） and external quantum efficiency （EQE） of 6.75 A/W and 1,266%, respectively, for the photodetector.
基金
This work was supported by the ＂Hundred Talents Program＂ of Chinese Academy of Sciences （CAS）,the National Natural Science Foundation of China （No. 91233120）, and the CAS/SAFEA International Partnership Program for Creative Research Teams.
