HgCdTe材料器件中的热处理技术

The Annealing Technology of HgCdTe Materials

热处理技术在整个HgCdTe材料器件工艺中有着重要地位。在一定的热力学条件下对HgCdTe材料进行热处理,可通过原子的热运动,调整材料电学性能和掺杂原子的占位形态、降低材料缺陷密度,以达到改善HgCdTe材料器件性能的目的。从热处理与电学性能、热处理与缺陷密度、掺杂材料中的热处理技术以及器件工艺中的热处理技术等几方面进行了总结论述。

The annealing technology played an important role in the HgCdTe materials. The position form of the doping atoms and electrical properties of HgCdTe materials can be changed by atomic thermal motion under the condition of thermodynamics. And the defect density could be decreased. As the result of annealing process, the properties of p-n junction had been improved. This paper summarized the annealing process to electrical properties and defect density, the annealing process of the doped materials and the annealing process of device technology by the former research.