伽马射线辐照对硅光电二极管性能的影响

Effect of gamma ray irradiation on silicon photodiodes

研究了伽马(γ)射线辐照对星上定标用硅光电二极管性能的影响。使用硅光电二极管分别接受20 krad(Si)、35 krad(Si)、50 krad(Si)总剂量的γ射线辐照,对比了器件在不同辐照剂量下暗电流及光谱响应度的变化。结果显示在35 krad(Si)以下剂量照射下,硅光电二极管暗电流及光谱响应度均未发现明显的变化,在50 krad(Si)剂量照射下,参试样品出现暗电流增加的现象,但该变化在定标器应用过程中带来的影响可以忽略。试验结果表明,参试的硅光电二极管在空间辐照环境下具有良好的稳定性及可靠性,可以作为在轨定标器可见波段探测单元备选器件。

The study on effect of gamma（γ） ray irradiation on silicon photodiodes for on-orbit calibration was carried out. Silicon photodiodes were irradiated by 20 krad（Si）, 35 krad（Si） and 50 krad（Si） gamma doses resepctively. The darkness current and spectral responsivity were measured before and after irradiation. It′ s found that the darkness current and spectral responsivity have no dramatic change under less than 35 krad（Si） gamma doses. Under 50 krad（Si） gamma doses, the darkness current of the sample increases slightly, but the influence on the application of calibrator can be ignored. The results suggest that silicon photodiode under test can be used as a candidate device for on-orbit calibrator in visible spectral bands due to its good long-term stability and reliability in the space irradiation environment.