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TD处理制备的VC涂层XPS谱与EDS面扫描分析(英文) 被引量:5

XPS and EDS Analysis of VC Coatings Prepared by TD Process
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摘要 以无水硼砂、FeV50和FeSi45为主要原料,通过TD和扩散处理在Cr12MoV基体表面制备了VC涂层。利用扫描电镜(SEM)、X射线衍射(XRD)、X射线光电子能谱(XPS)和能谱分析(EDS)等手段对VC的组织结构和化学元素分布进行了表征。用能谱面扫描分析了VC涂层表面和界面化学元素分布,对其界面冶金结合机理进行了探讨。结果表明,VC涂层为C和V两元素组成的化合物,其中V原子浓度大约是C原子的2倍;VC涂层为单一的VC相,V元素电子结合能位于512.8 e V,C元素电子结合能位于282.2 eV;V、C和Fe等元素在涂层界面处发生了相互扩散,形成了界面扩散层,涂层-基体结合界面为冶金结合方式。 VC(vanadium carbide) coating was prepared on the substrate surface of Cr12MoV cold worked die steel by TD(thermal diffusion) process using anhydrous borate, FeV50, FeSi45 as main materials. The structures and the chemical element distributions of the coating were characterized with SEM(scanning electron microscope), XRD(X-ray diffraction), XPS(X-ray photoelectron spectroscopy) and EDS(energy dispersive spectrometer), respectively. The chemical element distributions of VC coating surface and interface were analyzed with plane scan of EDS, and the mechanism of interfacial metallurgical bonding was discussed. The results show that the VC coating is a compound, consisting of C and V elements, and the concentration of V atom is twice as large as that of C atom. The VC coating is single VC phase, where the electron binding energy of V element is located at 512.8 eV, and that of C element is located at 282.2 eV. The diffusion between V, C and Fe elements occur at the coating interface and a layer of interface diffusion is formed, and the interface of VC coating-substrate is combined with the metallurgical bonding.
出处 《稀有金属材料与工程》 SCIE EI CAS CSCD 北大核心 2016年第2期297-302,共6页 Rare Metal Materials and Engineering
基金 The Science and Technology Support Project of Jiangsu Province,China(BE2014818)
关键词 VC涂层 TD处理 结合界面 VC coating TD(thermal diffusion) process bonding interface
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参考文献17

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