摘要
随着微电子工业的蓬勃发展,光刻技术向着更高分辨率的方向迈进,运用底部抗反射涂层有效消除光刻技术中的驻波效应、凹缺效应,提高关键尺寸均一性和图案分辨率,引起了广大研究者的关注。本文简要介绍了光刻胶和光刻技术,底部抗反射涂层的分类、基本原理、刻蚀工艺以及其发展状况。重点对底部抗反射涂层的最新研究进展进行了总结,尤其是碱溶型底部抗反射涂层在光刻胶中的应用研究,最后对底部抗反射涂层的发展前景和方向进行了展望。
With the rapid development of the micro-electronics industry, lithography technology has been moving forward to a higher resolution. Bottom anti-reflective coating has attracted great attention of researchers in terms of effectively eliminating the standing wave effect and the notching effect, improving the critical dimension uniformity and the patterning resolution. In this article, the photoresists and photolithography technique, and the classification, basic principle, etching process and development situation of the bottom anti-reflective coating are briefly reviewed. The latest research progress of the bottom anti-reflective coating is summarized in detail, especially the application of developable bottom anti-reflective coating in photoresist. Finally, the prospect and research directions of bottom anti-reflective coating in the future are also introduced.
出处
《影像科学与光化学》
CAS
CSCD
北大核心
2016年第2期123-135,共13页
Imaging Science and Photochemistry
基金
国家重大科技专项(2010ZX02304)
江苏省产学研前瞻性联合研究项目(BY2015019-14)
中央高校基本科研业务费专项资金(JUSRP11514)资助
关键词
光刻胶
光刻技术
底部抗反射涂层
photoresist
lithography
bottom anti-reflective coating