双极性碳纳米管薄膜晶体管构建及电性能研究

Fabrication and Electrical Properties of Ambipolar Thin Film Transistors(TFTs)Based on PFO-BT Sorted Semiconducting Single-walled Carbon Nanotubes

本文用聚[(9,9-二辛基芴-2,7-二基)-共-(1,4-苯并2,1-3噻二唑)](PFO-BT)分离的半导体碳纳米管作为有源层,通过气溶胶喷墨打印技术在刚性基体上构建出底栅结构的碳纳米管薄膜晶体管器件。用钛酸钡复合材料封装后,碳纳米管薄膜晶体管表现出很好的双极性、较高的开关比和零回滞特性,同时阈值电压能够控制在0V附近。通过两个双极性薄膜晶体管连接而成的反相器表现出零回滞、高电压增益(Vdd=1.5V时,其增益可达到35)和大噪声容限(Vdd=1V时,最大噪声容限为0.44V)。

This paper reported a valid method to fabricate ambipolar single-walled carbon nanotube （SWCNT） thin film transistors （TFTs） using BaTiO3 thin films as encapsulation layers. Carbon nanotube TFTs based on PFO-BT sorted sc-SWCNTs were firstly fabricated by aerosol jet printing. BaTiO3 thin films were then deposited on the top of the TFTs by spin-coating. After that, TFTs exhibited significant ambipolar properties with on-off ratio of 10^4 -10^5, negligible hysteresis and threshold voltage of close to 0 V. Furthermore, the invert based on ambipolar TFTs showed high vottage gain of 35 at Vdd of 1. 5 V and large noise margin of 0. 44 V at Vdd of 1 V.