基于MEMS技术的三维集成射频收发微系统

A Three-Dimensional Integrated RF Transceiver Microsystem Based on the MEMS Technology

基于电学互连的贯穿硅通孔(TSV)和高精度圆片级键合等MEMS加工技术,提出了一种硅基射频收发微系统的三维集成结构设计方案,在硅基衬底上将MEMS滤波器、MMIC芯片和控制芯片在垂直方向上集成为单个系统级封装芯片,开发了一套可应用于制备三维集成射频收发微系统的MEMS加工工艺流程。通过基于MEMS技术的三维集成工艺,成功制备了三维集成C波段射频收发微系统芯片样品,芯片样品尺寸为14 mm×11 mm×1.4 mm,测试结果表明,制作的三维集成C波段射频收发微系统样品技术指标符合设计预期,实现了在硅基衬底上有源器件和无源器件的三维集成,验证了所开发工艺的可行性。

A three-dimensional integrated structure design scheme of a silicon RF transceiver microsystem was proposed based on the MEMS technologies such as the through-silicon-via（TSV）for the electrical interconnection and high-precision wafer bonding.On the silicon substrate,the MEMS filter,MMIC chips and control chips were integrated in one system package chip.The MEMS fabrication process for the three-dimension integrated RF transceiver microsystem was presented.A three-dimensional integrated C-band RF transceiver microsystem chip sample was successfully fabricated by the three-dimensional integrated process based on the MEMS technology.This sample size is 14 mm×11 mm×1.4 mm.The test results show that the technical index of the sample satisfies all the requirements.The three-dimensional integration of active and passive devices on the silicon substrate was achieved,demonstrating the feasibility of the development process.