摘要
针对范德堡霍尔样品复杂的制作工艺会引入较大误差,造成定量迁移率谱分析(QMSA)结果不准确,利用非接触霍尔测量采集的功率数据作为定量迁移率谱分析的输入数据,并通过数据点平滑外插扩展最大磁场范围,以获得更全面的载流子种类信息和消除不具物理意义的映像峰,进而得到多载流子半导体材料体系中单一载流子的迁移率和密度。对InGaP/GaAs HBT和InP PHEMT外延材料的测量分析结果表明,此表征技术相比非接触霍尔测量系统嵌入的混合电导分析软件,能够提供更加全面的载流子种类以及更加准确的载流子迁移率和密度值。
To solve the issues that the inaccurate results of the quantitative mobility spectrum analysis(QMSA)were induced by the larger error deriving from the complex manufacture process of Van der Pauw Hall samples,the power data collected by the non-contact Hall measurement was used as the input data of the quantitative mobility spectrum analysis(QMSA).The more comprehensive information about carrier species was obtained and unphysical mirror peaks were eliminated by employing experimental data point extrapolation to expand the scope of magnetic field,thus the mobility and density of the individual carrier in multi-carrier semiconductor materials were extracted.The measurement and analysis results of InGaP/GaAs HBT and InP PHEMT epitaxial materials show that the characterization technique compared with the embedded hybrid mixed conduction analysis software in the non-contact Hall measurement system can provide more comprehensive carrier species and more accurate mobility and density values of the carriers.
出处
《微纳电子技术》
北大核心
2016年第3期195-200,共6页
Micronanoelectronic Technology
关键词
非接触霍尔测量
定量迁移率谱分析(QMSA)
混合电导分析
迭代算法
收敛因子
non-contact hall measurement
quantitative mobility spectrum analysis(QMSA)
hybrid mixed conduction analysis
iterative algorithm
convergence factor