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Direct tunneling gate current model for symmetric double gate junctionless transistor with SiO_2/high-k gate stacked dielectric

Direct tunneling gate current model for symmetric double gate junctionless transistor with SiO_2/high-k gate stacked dielectric
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摘要 A junctionless transistor is emerging as a most promising device for the future technology in the decananometer regime. To explore and exploit the behavior completely, the understanding of gate tunneling current is of great importance. In this paper we have explored the gate tunneling current of a double gate junctionless transistor（DGJLT） for the first time through an analytical model, to meet the future requirement of expected high-k gate dielectric material that could replace SiO2. We therefore present the high-k gate stacked architecture of the DGJLT to minimize the gate tunneling current. This paper also demonstrates the impact of conduction band offset,workfunction difference and k-values on the tunneling current of the DGJLT. A junctionless transistor is emerging as a most promising device for the future technology in the decananometer regime. To explore and exploit the behavior completely, the understanding of gate tunneling current is of great importance. In this paper we have explored the gate tunneling current of a double gate junctionless transistor（DGJLT） for the first time through an analytical model, to meet the future requirement of expected high-k gate dielectric material that could replace SiO2. We therefore present the high-k gate stacked architecture of the DGJLT to minimize the gate tunneling current. This paper also demonstrates the impact of conduction band offset,workfunction difference and k-values on the tunneling current of the DGJLT.
作者 S.Intekhab Amin R.K.Sarin
机构地区 Department of Electronics and Communication Engineering
出处 《Journal of Semiconductors》 EI CAS CSCD 2016年第3期37-41,共5页 半导体学报（英文版）
关键词 junctionless transistor direct tunneling gate current model high-k gate stacked dielectric junctionless transistor direct tunneling gate current model high-k gate stacked dielectric
分类号 TN386 [电子电信—物理电子学]
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参考文献22

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Journal of Semiconductors
2016年 第3期

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