CoSb_3纳米薄膜的制备与热电性能（英文）

Fabrication and Thermoelectric Performance of CoSb_3 Nanoparticle Films

通过对低压化学气相沉积制得的CoSb3纳米薄膜在300~800K温度范围内的热电性能测试,发现其电阻率较其他单晶CoSb3块状样品低一个量级,热导率值在1.08~4.05 Wm-1 K-1之间,比单晶CoSb3低得多.这表明纳米结构导致热导率显著降低,最高热电优值在773K出现且为0.114.这种纳米薄膜材料在研制新型高效热电半导体方面极具应用前景.

The thermoelectric properties of the CoSb3 nanoparticle films,which have been prepared via the Low Pressure Chemical Vapor Deposition,were measured in the temperature range from 300 to 800K.The resistivity of the CoSb3 nanoparticle films is one order of magnitude lower than the single crystal CoSb3 bulk sample.The measured values of the thermal conductivity of the CoSb3 nanoparticle films are in the range from 1.08 to 4.05 Wm-1 K-1,which are much lower than that of the single crystal CoSb3 samples.This suggests that the nano-structure results in a significant reduction of the thermal conductivity.The highest thermoeletric optimal value was 0.114 and obtained at 773 K.The discussed nanoparticle films are promising for realizing new types of highly efficient thermoelectric semiconductors.