摘要
设计了一种工作于0.7-3GHz、最高输出功率为23.6dBm 的CMOS（互补式金属氧化物半导体）宽带PA （功率放大器）,该PA由单级放大器组成,采用全差分Cascode电路结构.PA的输入、输出端均采用开关电容并联片上变压器的形式实现宽带匹配,通过数字信号控制改变容值大小,进而调谐PA 的工作频点,实现宽带工作范围.该PA 基于TSMC0.18μmCMOS工艺模型进行设计,采用AgilentADS软件进行PA 性能仿真和片上变压器的设计.版图仿真结果表明：在0.7-3GHz频段内,PA的输入完全匹配（S11〈-10dB）,小信号增益S21在1.7GHz达到27dB,芯片面积仅为0.75mm^2.
A wideband CMOS Power Amplifier(PA)operating from 700 MHz to 3GHz with 23.6dBm maximum output power is presented in this paper.The PA consists of a single-stage amplifier with fully differential cascode topology.On-chip transformers paralleled with switched-capacitors are applied in the input and output of this PA.The wideband input and output matches are realized by digitally controlling the states of switches to change the value of capacitors,while tuning the operating frequency of this PA to realize wide range operation.This wideband PA including on-chip transformers is designed based on TSMC 0.18μm CMOS model and simulated using Agilent's ADS.Layout's post-simulation results indicate that the input match S11 is perfectly matched(less than-10dB)from 700 MHz to 3GHz and the gain of S21 reaches 27dB at 1.7GHz with only 0.75mm2 chip area.
出处
《光通信研究》
北大核心
2016年第2期44-46,共3页
Study on Optical Communications
基金
国家自然科学基金资助项目(61170135)
湖北省协同创新中心开放基金资助项目(HBSKFZD2014010)
