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Bi_(3.15)Nd_(0.85)Ti_(3-x)Mg_xO_(12)薄膜的光学透射率研究

Research on the Optical Transmittance of Bi_(3.15)Nd_(0.85)Ti_(3-x)Mg_xO_(12) Films
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摘要 在600℃退火温度的条件下,采用化学溶液沉积法(CSD),以ITO导电玻璃为衬底,制备了不同Mg掺杂量(x=0.00,0.03,0.05,0.07)的Bi_(3.15)Nd_(0.85)Ti_(3-x)Mg_xO_(12)(简记为BNTMg(x))系列薄膜.研究了不同掺杂含量对薄膜的结晶性能和光学透射率的影响.结果表明,本征吸收边并没有随着掺杂组分的改变而发生明显的变化,并且在Mg组分为0.05时,薄膜的透射率最大. Thin films of Nd and Mg cosubstituted bismuth titanate Bi3.15Nd0.85Ti3-xMgxO12( BNTMg( x),x = 0. 00,0. 03,0. 05,0. 07),were fabricated on ITO substrates at 600℃ by a chemical solution deposition technique. The structures of the films were analyzed using x-ray diffraction. The optical transmittance properties of BNTMg( x) films were systematically investigated as a function of the different doping. It is found that a suitable doping( x = 0. 05) enhances the optical transmittance of the film.
作者 胡增顺
出处 《开封大学学报》 2015年第4期81-84,共4页 Journal of Kaifeng University
基金 2011年河南省教育厅自然科学研究计划项目(2011C430002)
关键词 BNTMg(x) 铁电薄膜 光学透射率 化学溶液沉积 BNTMg(x) ferroelectric thin films optical transmittance chemical solution deposition
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  • 1Scott J F, Araujo C A. Ferroelectric Memories [J]. Science, 1989, 246(4936) : 1400 - 1405.
  • 2Watanabe T, Kojima T, Sakai T, Funakubo H,Osada M. Large remanent polarization of Bi4Ti3012 -based thin films modified by the site engineering technique[J]. Journal of Applied Physics, 2002, 92:1518 -1523.
  • 3Maiwa H, lizawa N, Togawa D, Hayashi T, Sakamato W, Yamada M, Hirano S I. Electromechanical properties of Nd -doped Bi4 Ti3 O12 films : A candidate for lead - free thin - film piezoeleetrics [ J ]. Applied Physics Letters, 2003, 82 ( 11 ) : 1760 - 1762.
  • 4Chon U, Kim K B, Jang H M, Yi G C. Fatigue -free samarium- modified bismuth titanate (Bi4_xSmxTiaO12) film capacitors having large spontaneous polarizations[J]. Applied Physics Letters, 2001,79(19) : 3137 -3139.
  • 5Chon U, Shim J S. Ferroelectric properties and crystal structure of praseodymium - modified bismuth titanate [ J ]. Journal of Ap- plied Physics, 2003,93 ( 8 ) :4769 - 4775.
  • 6Giridharan N V, Subramanian M, Jayavel R. Enhancement of polarization in bismuth titanate thin films co - modified by La and Nd for non - volatile memory applications [ J ]. Applied Physics A, 2006, 83 ( 1 ) : 123 - 126.
  • 7Zhong X L, Li B, Wang J B, Liao M, Liao H, Zhou Y C. Ferroelectric properties of Mn - Doped Bi3.15Nd0.asTi3012 thin films prepared under different annealing conditions[ J]. Materials Letters, 2008,62( 17 ) : 2891 -2896.
  • 8Ruan K, Wu G, Liang T, Bao D. Structural and electrical characteristics of chemical solution derived (Bi3.zL%.4Nd0.4 )Ti3 O12 thin films[J]. Thin Solid Films, 2008, 516(16) : 5248 -5251.
  • 9Zhong X L, Wang J B, Liao M. Ferroelectric and dielectric properties of Nd3+/Zr4 + cosubstituted Bi4Ti30~2 thin films [ J ]. Ap- plied Physics Letters, 2007, 90 : 102906 - 102909.
  • 10Ye Z, Tang M H, Zhou Y C. Electrical properties of V -doped Bi3. ~5 Ndo.ssTi~ Ox2 thin films w~tb different contents[ J]. Applied Physics Letters, 2007, 90 : 082905 - 082907.

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