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Dynamics of a three-level V-type atom driven by a cavity photon and microwave field

Dynamics of a three-level V-type atom driven by a cavity photon and microwave field
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摘要 We discuss the dynamics of a three-level V-type atom driven simultaneously by a cavity photon and microwave field by examining the atomic population evolution. Owing to the coupling effect of the cavity photon, periodical oscillation of the population between the two upper states and the ground state takes place, which is the well-known vacuum Rabi oscillation. Meanwhile, the population exchange between the upmost level and the middle level can occur due to the driving action of the external microwave field. The general dynamic behavior is the superposition of a fast and a slow periodical oscillation under the cooperative and competitive effect of the cavity photon and the microwave field. Numerical results demonstrate that the time evolution of the population is strongly dependent on the atom-cavity coupling coefficient g and Rabi frequency Ωe that reflects the intensity of the external microwave field. By modulating the two parameters g and Ωe, a large number of population transfer behaviors can be achieved. We discuss the dynamics of a three-level V-type atom driven simultaneously by a cavity photon and microwave field by examining the atomic population evolution. Owing to the coupling effect of the cavity photon, periodical oscillation of the population between the two upper states and the ground state takes place, which is the well-known vacuum Rabi oscillation. Meanwhile, the population exchange between the upmost level and the middle level can occur due to the driving action of the external microwave field. The general dynamic behavior is the superposition of a fast and a slow periodical oscillation under the cooperative and competitive effect of the cavity photon and the microwave field. Numerical results demonstrate that the time evolution of the population is strongly dependent on the atom-cavity coupling coefficient g and Rabi frequency Ωe that reflects the intensity of the external microwave field. By modulating the two parameters g and Ωe, a large number of population transfer behaviors can be achieved.
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2016年第4期137-144,共8页 中国物理B(英文版)
基金 supported by the National Natural Science Foundation of China(Grant Nos.11434017 and 11374357) the National Basics Research Program of China(Grant No.2013CB632704)
关键词 population transfer external field three-level atom population transfer, external field, three-level atom
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