摘要
Hybrid octagonal-ring microlasers are investigated for realizing a stable output from a silicon waveguide based on a two-dimensional simulation. The inner radius of the ring is optimized to achieve single-mode and low-threshold operation. Using the divinylsiloxane-benzocyclobutene （DVS-BCB） bonding technique, a hybrid A1GaInAs/Si octagonal-ring microlaser vertically coupled to a silicon waveguide is fabricated with a side length of 21.6 pm and an inner radius of 15 pm. A single transverse-mode operation is achieved with a threshold current density of 0.8 kA/cm2 and a side-mode suppression ratio above 30 dB, and a stable output from the lower silicon waveguide is obtained.
Hybrid octagonal-ring microlasers are investigated for realizing a stable output from a silicon waveguide based on a two-dimensional simulation. The inner radius of the ring is optimized to achieve single-mode and low-threshold operation. Using the divinylsiloxane-benzocyclobutene （DVS-BCB） bonding technique, a hybrid A1GaInAs/Si octagonal-ring microlaser vertically coupled to a silicon waveguide is fabricated with a side length of 21.6 pm and an inner radius of 15 pm. A single transverse-mode operation is achieved with a threshold current density of 0.8 kA/cm2 and a side-mode suppression ratio above 30 dB, and a stable output from the lower silicon waveguide is obtained.
基金
supported by the High Technology Project of China(No.2012AA012202)
the NSFC/RGC joint project(No.61431166003)
