InGaN太阳电池光电转换特性的理论计算

Theoretical calculation of photoelectric conversion efficiency of InGaN solar cell

从p-n结太阳电池的理论模型和InxGa1-xN带隙的经验公式出发,结合实际材料参数,通过改变In组分来调节InxGa1-xN带隙。计算了标准太阳光谱AM1.5光子通量及该光谱下InxGa1-xN单结和InxGa1-xN/Ga P异质双结太阳电池的光电转换效率。结果显示,InxGa1-xN单结太阳电池的最大转换效率是27.28%,与之对应的In组分为0.82。InxGa1-xN/Ga P异质双结太阳电池的最高转换效率为30.75%,对应的In组分是0.74。这些结果可作为设计制备In Ga N太阳电池的理论依据。

Based on the theoretical model of p-n junction solar cells and empirical energy gap formula of InxGa1-xN,combining with the actual material parameters, the energy gap of InxGa1-xN was changed by adjusting the In contents. The photon flux density of AM1.5 solar spectrum and photoelectric conversion efficiency of single-junction InxGa1-xN and double-heterojunction InxGa1-xN solar cells were calculated. The results show that the maximum solar energy conversion efficiency of InxGa1-xN single-junction solar cells is 27.28%, the In contents is 0.82, and that of double heterojuction InxGa1-xN/Ga P solar cells with In contents of 0.74 achieves up to 30.75%. These results may provide a theoretical basis for the preparation of In Ga N solar cells.