面向Ga^+和惰性离子的聚焦离子束加工机理的研究

Simulations of the parameters in the focused ion beam implanted different materials

聚焦离子束(FIB)技术越来越广泛地应用于纳米加工等领域,其加工机理的研究是该技术发展的重要基础。本文针对纳米结构加工过程中聚焦离子束对加工精度的影响规律,基于蒙特卡罗法的SRIM程序,对离子轰击硅、金、铬等典型基底进行了仿真分析与建模,研究了Ga+、He+、Ne+不同离子束的入射能量对入射深度、能量损伤、横向离散等参数的影响规律,解释了He+在加工小于10nm线宽结构中的优势及其加工中存在的新现象。结果表明,在FIB加工过程中可采用不同的离子束源,进行加工结构的工艺优化。

Focused Ion Beam（ FIB） technology becomes more widely used in the field of Nano-manufacturing. So the research of its manufacturing mechanism is an important foundation for the development of this technology. Based on Monte Carlo SRIM program,the paper simulated and analyzed ion into typical substrate such as silicon,gold,chromium. Besides,the paper studied the influence of depth,energy loss of different ions beam,such as Ga＋He＋and Ne＋,explained the phenomena in the processing of less than 10 nm line width structure and processing advantages exist. It is found that using different ion beam source to optimize results is available in the nano-manufacturing process.