摘要
A method of magnetron sputtering followed by continuous-wave （cw） laser irradiation is developed to prepare crystalline silicon supersaturated with titanium. The irradiation of single crystalline Si samples sputtered with a thin layer of Ti is carried out under the 1064nm ew laser in a specially designed home-made facility. The thickness of the Si layer, within which the concentration of Ti surpasses the Mott limit, reaches 365 nm and the maximum concentration of Ti reaches 1.83 × 1021 cm-3. The crystalline structure of the Si samples is kept unchanged after cw laser irradiation. These results show that the current method can be an emcient way to obtain an intermediate band semiconductor material for solar cells.
A method of magnetron sputtering followed by continuous-wave （cw） laser irradiation is developed to prepare crystalline silicon supersaturated with titanium. The irradiation of single crystalline Si samples sputtered with a thin layer of Ti is carried out under the 1064nm ew laser in a specially designed home-made facility. The thickness of the Si layer, within which the concentration of Ti surpasses the Mott limit, reaches 365 nm and the maximum concentration of Ti reaches 1.83 × 1021 cm-3. The crystalline structure of the Si samples is kept unchanged after cw laser irradiation. These results show that the current method can be an emcient way to obtain an intermediate band semiconductor material for solar cells.
基金
Supported by the National Natural Science Foundation of China under Grant No 61076056
the Opening Project of State Key Laboratory of High Performance Ceramics and Superfine Microstructure of Shanghai Institute of Ceramics of Chinese Academy of Sciences under Grant No SKL201404SIC
