摘要
The relaxation oscillation of the phase change memory （PCM） devices based on the Ge2Sb2Te5 material is investigated by applying square current pulses. The current pulses with different amplitudes could be accurately given by the independently designed current testing system. The relaxation oscillation across the PCM device could be measured using an oscilloscope. The oscillation duration decreases with time, showing an inner link with the shrinking threshold voltage Vth. However, the relaxation oscillation would not terminate until the remaining voltage Von reaches the holding voltage Vh. This demonstrates that the relaxation oscillation might be controlled by Von. The increasing current amplitudes could only quicken the oscillation velocity but not be able to eliminate it, which indicates that the relaxation oscillation might be an inherent behavior for the PCM cell.
The relaxation oscillation of the phase change memory （PCM） devices based on the Ge2Sb2Te5 material is investigated by applying square current pulses. The current pulses with different amplitudes could be accurately given by the independently designed current testing system. The relaxation oscillation across the PCM device could be measured using an oscilloscope. The oscillation duration decreases with time, showing an inner link with the shrinking threshold voltage Vth. However, the relaxation oscillation would not terminate until the remaining voltage Von reaches the holding voltage Vh. This demonstrates that the relaxation oscillation might be controlled by Von. The increasing current amplitudes could only quicken the oscillation velocity but not be able to eliminate it, which indicates that the relaxation oscillation might be an inherent behavior for the PCM cell.
基金
Supported by the Strategic Priority Research Program of Chinese Academy of Sciences under Grant No XDA09020402
the National Key Basic Research Program of China under Grant Nos 2013CBA01900,2010CB934300,2011CBA00607 and 2011CB932804
the National Integrate Circuit Research Program of China under Grant No 2009ZX02023-003
the National Natural Science Foundation of China under Grant Nos 61176122,61106001,61261160500 and 61376006
the Science and Technology Council of Shanghai under Grant Nos 12nm0503701,13DZ2295700,12QA1403900,13ZR1447200 and 14ZR1447500
