摘要
一、前言离子注入的优点是众所周知的,在化合物半导体方面可以用它来提高发光效率,制作良好的发光材料和半导体器件。本文介绍在GaAs1-xPx材料中注入Zn+和N+提高二极管发光效率的初步研究结果。 GaAs1-xPx发光二极管主要是在结区产生电致发光。
Conditions of the implantation are as follows, when implanted, the energies of ions were 160Kev and 80Kev; the doses were 1×10^(14)~5×10^(15)cm^(-2) and 2×10^(15)~4×10^(15)cm^(-2) respectively; the temprature of samples was 350℃. After implantation, the samples were sealed in a vacuum tube and annealed at 750℃~1000℃. From the measurments of integrated cathodoluminescence, we find that after annealing at 900℃, the intensity of cathodoluminescence was higher than the samples without implantation of Nitrogen ions. We saw from the analysis of the spectra(77°K) of cathodoluminescence the appearance of the peaks of Nx and near-band with relation to Zn acceptor. Hence, the isoelectronic trap was formed by implanted N atoms. After annealing over 750℃—800℃, the radiating damage by ion implantation was restored almost completely. The Zine activity rose to 100% when the samples were annealed at 850℃~900℃. The results of the electroluminescence for the diode showed that after implantation, the electrical luminescence efficiency rose obviously.
出处
《北京师范大学学报(自然科学版)》
CAS
1980年第1期47-56,共10页
Journal of Beijing Normal University(Natural Science)