GaAs_(1-x)P_x∶N间接能隙材料的光致发光谱

PHOTOLUMINESCENCE SPECTRUM MEASURED ON N-IMPLANTED CaAs_(1-x)Px(0.43≤x≤0.628) IN THE INDIRECT BANDGAP REGION

前言近年来,对GaAs1-xPx材料的发光性质,国外已进行了许多研究。尤其是关于等电子杂质氮的参与对发光性质的影响,引起了更多人的注意,通过离子注入氮的掺杂,又使研究的范围向间接能隙区推进。以上这些研究所围绕的中心问题,在应用上,主要是发光二极管（LED）的发光效率和发光波长两方面。而GaAsP材料正是目前国内以致国际制造LED的重要材料,对它进行研究是有一定意义的。

This paper reports the measurements of photoluminescence(PL)spectrum of N-ion implanted n-type GaAs_(1-x)P_x(0.43≤x≤0.628), at 77k and lattice constants of the same samples by X-ray diffractometer. The lattice constants of various samples, dealing with as solidsolutions, gave the results of the compositions x respectively, by using Vegard's law. After analyzing the relation between the PL spectrum and sample's composition x, the fundamental luminous characters of the GaAs_(1-x)P_x is explored. The graph of the peak emission energy of PL versus the composition is plotted. The curve is in good agreement with other studies published for the same kind of materrials. There is a small shoulder observed in our PL spectrum, which is interpreted to be caused, by phonon excitation. The variation of the luminescence intersity as a function of its composition is investigated also.