高频重离子源工作物质的源内化学合成与溅射

THE CHEMICAL SYNTHESIS AND SPUTTERING OF WORKING MATERIAL IN A R.F.HEAVY ION SOURCE

在前几年的工作中,我们对通常的高频源进行了改进,研制了一个高频型重离子源.它可以引出多种元素的离子束,但是在产生挥发温度高且无稳定化合物的元素的离子束时遇到了困难.

This article reports a research result of applying chemical reaction to extract metal ions from a radio-frequency ion source.Halogen or its compounds are introduced into a quartz discharge chamber of radio-frequency ion source,so that the chemical reaction of halogen happens with desirable ele- ment.Sometimes the physical sputtering is also used simultaneously.In this way,the ion beams of a number of elements,especially of those with high melt- ing-points and which can not form stable compounds,are obtained.So far,the ions extracted are.Re^+,Mo^+,Pd^+,Ta^+,Ti^+,Cr^+,Ce^+,Bi^+,Ag^+,In^+,Fe^+,Cu+, Al^+,Be^+ and othrs.The total ion current is ranged generally from 0.8 to 3 mA.The ion needed is about 20% to 70% of the total ion current.Some of them have been used on the 400 keV ion implanter of Beijing Normal University.The target current is generally tens to hundreds of A.It can operate continuously(or accumulatively)more than thirty hours after replacing a new working material.