摘要
与注磷相比,五价的砷元素作为施主杂质注入半导体材料硅中,具有许多独特的优点:(1)固溶度高;(2)投影射程小,可以得到较浅的p-n结;(3)有可能通过人为控制,使砷扩散后的浓度分布趋于对发射极有利的矩形分布;(4)引起的损伤较浅。
In the present paper, the RBS results of 43 silicon single crystal samples implanted with arsenic have been described. Not only the arsenic doses in specimens have been checked, but also the arsenic profiles have been systematically measured for different implantation parameters and thermal annealing conditions. Consequently, the relations between arsenic redistributions after annealing and these parameters and conditions have been obtained.
出处
《北京师范大学学报（自然科学版）》
CAS
1983年第2期57-62,共6页
Journal of Beijing Normal University(Natural Science)
