摘要
利用白光快速退火设备研究了白光退火特性,得到As通过siO_2注入Si制备0.1～0.15μm无缺陷浅结的最佳条件.发现As通过SiO_2注入的样品退火后其载流子浓度分布出现双峰现象,进而提出了分析这种现象的增强扩散模型.还发现B+As双注入的样品经瞬态退火后消除了减速场.
The effects of tungsten-halogen rapid thermal annealing of As-implanted sample and conditions of fabrication of 0.1~0.3μm shallow junction are stud- ied. The residual defects is observed. So, the shallow junction of 0.1μm free of defects is obtained. It is discovered that the double peak in concentration profile is appeared in As-implanted (through SiO_2 film) Si and rapid thermal annealed. And a model of enhanced diffusion is discussed. The retarded field in double-implanted sample disappeared when the sample is rapid thermal annealed.
出处
《北京师范大学学报（自然科学版）》
CAS
1987年第3期41-48,共8页
Journal of Beijing Normal University(Natural Science)
基金
国家自然科学基金
关键词
双重离子注入
快速热退火
增强扩散
浅结
背散射分析
double implantation, rapid thermal annealing, enhanced diffusion, shallow junction, backscattering analysis
