用快速白光辐照生成钨硅化物

THE FORMATION OF TUNGSTEN SILICIDES BY RTA

报导了用快速白光辐照、通过薄膜反应在GaAs衬底上生成单一化学相的硅化物W_5Si_3,对样品的结构方式和硅供应量对钨硅化物生成相的影响进行了讨论。

A single phase W_5Si_3 is achieved by rapid thermal annealing (light irr- adiation) on GaAs deposited with multiply sandwhiched films of W and Si under UHV. The effects of sample preparation and Si supply on the forma- tion of tungsten silicides are discussed.