MOSi_2生长动力学研究

A STUDY OF GROWTH KINETICS OF MoSi_2

用超高真空电子束蒸发法,在单晶Si(100)衬底上淀积厚度为1000A的单层Mo膜,并在不破坏真空条件下,继续蒸镀120Aα-Si层。将样品在1.3×10^(-4)～2.6×10_(-4)Pa真空条件下退火,烧结硅化物。观察到硅化物的形成温度为500℃。通过500,525,550℃等温退火,得到MoSi_2生长厚度与退火时间的平方根成正比的结论。说明MoSi_2生长过程受主扩散元Si通过MoSi_2生长层的扩散限制,生长动力学服从抛物线规律。从而得到表观激活能E_a=1.92eV。

The Mo-layers of 1 000,A thickness are e-beam deposited onto the n-type (100) Si substrates under UHV conditions. A Silicon cap 120A thick is then deposited onto the top of the Mo-films. Annealing is done in a quartz tube vacuum furnace pumpted to a pressure of 1.3×10^(-4)~2.6×10^(-4)Pa. It is found that the formation temperatures of the MoSi_2 is 500℃. The specimens are annealed isothermally at temperatures 500, 525, 550℃. It is shown that the growth process is limited by diffusion and the growth kinetics follows a parabolic law with an apparent activation energy around 1.92 eV.