PIN光电探测器用反外延片工艺研究

On Preparation Technology of PIN Photodetector with Anti-Epitaxial Wafer

创新性使用反外延法工艺,介绍了适用于制备近红外波段PIN光电探测器的硅外延材料的研制工艺,在区熔单晶抛光片上进行重掺导电层和支撑层的外延层制备。通过对硅源流量与掺杂剂浓度的精确控制,实现了快速外延生长和高浓度掺杂。通过精细的后期加工工艺,将高阻区熔层加工为厚度和表面质量均满足器件要求的有源层。结果显示,采用反外延法工艺得到的反外延材料片应用到PIN光电二极管中,不仅节省器件制备中的工艺程序,而且大大提高了器件耐压性。

This paper introduces the research of silicon epitaxy material process applicable to the near infrared band PINphotodetector by using the anti-epitaxy method of process innovation ideas to carry out epitaxial layer preparation for heavydoped conductive layer and support layer on FZ monocrystalline polished wafer.Through a precise control of silicon sourceflow and dopant concentration,rapid epitaxial growth and high concentration of doping were achieved.By using elaboratepost-processing technology,the high resistance zone melting layer thickness and surface processing for active layer qualitycan satisfy the requirements of the device.The results show that with the application of anti-epitaxial material to PIN photoelectricdiode,not only can device preparation process be saved,but also voltage resistance of the device greatly improves.