Cu_2O氧气流量对ZnO-Cu_2O薄膜异质结特性的影响

Effect of Cu_2O oxygen flow on characteristic of ZnO-Cu_2O thin film heterojunction

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摘要利用磁控溅射法在BK-7玻璃基片上制备了ZnO-Cu_2O薄膜异质结。利用X射线衍射、分光光度计和范德堡方法分析了不同氧气流量对Cu_2O单层薄膜的结构、光学和电学性质的影响,并分析了不同氧气流量制备的Cu_2O对ZnO-Cu_2O异质结I-V特性的影响。研究结果表明:ZnO-Cu_2O薄膜异质结样品的I-V曲线具有二极管的整流特性,样品的正向阈值电压随着Cu_2O氧气流量的增加而增大。较大正向电流的样品(氧气流量为10.6 sccm)具有较小的串联电阻和泄露电阻,以及较大的载流子浓度。 ZnO-Cu_2O thin film heterojunctions deposited on BK-7 glass substrates were fabricated by magnetron sputtering.The microstructure,optical and electrical properties of Cu_2O single-film were characterized by X-Ray diffraction,spectrophotometer and Van der Pauw method,respectively.The current-voltage（I-V）characteristics of ZnO-Cu_2O heterojunctions with different oxygen flow of Cu_2O were investigated.Results show that ZnO-Cu_2O heterojunctions have well-defined rectifying behavior.With the increase of oxygen flow of Cu_2O,the forward bias threshold voltage of ZnO-Cu_2O heterojunctions increases.The sample with larger forward current prepared under oxygen flow of 10.6 sccm has smaller series resistance,smaller leakage resistance,and larger carrier concentration.

作者吕佩伟翁卫祥施洋马靖

机构地区福州大学物理与信息工程学院

出处《电子元件与材料》 CAS CSCD 2016年第4期25-28,共4页 Electronic Components And Materials

基金福州大学科技发展基金资助(No.2013-XY-30)

关键词磁控溅射氧化亚铜氧气流量薄膜异质结 I-V特性 magnetron sputtering Cu_2O oxygen flow thin film heterojunction I-V characteristics

分类号 TN365 [电子电信—物理电子学]

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Cu_2O氧气流量对ZnO-Cu_2O薄膜异质结特性的影响

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