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基于GaN的大功率高线性固态发射机研制 被引量:3

Development of GaN SSPA Transmitter with High Power and High Linearity
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摘要 介绍了一种Ga N大功率高线性固态发射机。利用Ga N HEMT的高功率特性,结合新型波导魔T低损耗功率合成的特点,在7.9~8.4GHz范围内实现了连续波饱和输出功率大于200W,效率大于20%。此外,应用新型模拟预失真方法提升功放的线性化指标,在额定输出功率下三阶交调指标(IMD3)优于-30d Bc,改善功放的线性度11d B。该发射机具有输出功率大,线性度好等优点,整体性能优于国外同类产品。 A Ga N SSPA transmitter with high power and high linearity is presented. Using high power Ga N HEMT devices and the new Magic-T high efficiency power combiner,the SSPA delivers more than 200 W saturated output power with power efficiency above 20% in the frequency range of 7.9 ~ 8.4GHz. Additionally,a new analog pre-distortion method is applied to improve linearity,achieves IMD3 of- 30 d Bc with rated output power,which improves the linearity by11 d B. The advantages in high power and high linearity make the specification of the transmitter better than the similar abroad products.
作者 罗嘉 张人天
出处 《电子信息对抗技术》 2016年第2期61-65,共5页 Electronic Information Warfare Technology
关键词 固态功放 发射机 氮化镓 功率合成 预失真 SSPA transmitter GaN HEMT power combiner pre-distortion
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  • 2Green Bruce M, Tilak Vinayak, Lee Sungjae, et al. High-power broad-band AlGaN/GaN HEMT MMICs on SiC substrates [J]. IEEE Ttrans on Microwave Theory and Techniques, 2001,49(12) : 2486-2493.
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