CMOS单片高隔离度Ka波段单刀双掷开关的设计

CMOS monolithic Ka-band SPDT switch design with high isolation

提出了应用0.13μm CMOS工艺设计的具有高隔离度的Ka波段单刀双掷（Single Pole Double Throw,SPDT）开关。测试结果显示,在Ka波段此单片开关插损为2.7~3.7 d B,在35 GHz时测得的输入1dB压缩点（P_（-1dB））为8d Bm。通过使用并联NMOS晶体管的拓扑结构并且使用高Q值的匹配网络,测得的开关在30~45 GHz有33~51 d B的隔离度。此Ka波段单刀双掷开关芯片的核心面积（die）仅仅为160×180μm2。

This paper presents a Ka-band high isolation SPDT（Single Pole Double Throw） switch using 0. 13 μm CMOS process. The switch has a measured insertion loss of 2. 7- 3. 7 d B and an input 1 dB compression power（ P_（1dB）） of 8 d Bm at 35 GHz. Via using the shunt NMOS topology and high quality factor match networks, 33 ~ 51 dB measured isolation is obtained within the frequency range of 30 ~ 45 GHz. The switch core occupies only 160 × 180 μm2chip area.