ZLSi7Cu2Mg合金微弧氧化工艺的研究

Research on Micro-arc Oxidation Process of ZLSi7Cu2Mg Alloy

针对ZLSi7Cu2Mg合金进行微弧氧化,研究了不同阶段膜层的生长速度以及各工艺参数对膜厚的影响。采用恒流电源,实验过程中以电流、脉数、脉宽及氧化时间作为影响因素。结果表明,起初氧化膜生长速度很快,随氧化进行,生长速度逐渐下降,最后趋于平衡。在所有参数中,电流对于氧化膜最终厚度的影响最为明显。

The micro-arc oxidation was carried out on ZLSi7Cu2Mg alloy. The influences of growth rate in different stages and process parameters on the film thickness were researched. Adopting constant current power supply, the parameters including current, rapid pulse, pulse width and oxidation time were taken as influence factors. The results show that the oxidation film grows quickly at first with the oxidation proceeding. The growth rate gradually declines and at last tends to balance. The effects of current on the oxidation film thickness are the most evident among all the parameters.