一种超低功耗高性能的亚阈值全CMOS基准电压源

An Ultra Low Power and High Performance CMOS-Only Voltage Reference Based on Subthreshold

介绍了一种超低功耗、无片上电阻、无双极型晶体管（BJT）的基于亚阈值CMOS特性的基准电压源,该带隙基准源主要用于低功耗型专用集成电路（ASIC）。采用Oguey电流源结构来减小静态电流,以降低功耗。通过使用工作在线性区的MOS管代替传统结构中的电阻消除迁移率和电流的温度影响,同时减小芯片面积;采用共源共栅电流镜以降低电源电压抑制比和电压调整率。电路基于SMIC 0.18μm CMOS工艺进行仿真。仿真结果表明,在-45~130℃内,温漂系数为29.1×10-6/℃,电源电压范围为0.8~3.3 V时,电压调整率为0.056%,在100 Hz时,电源电压抑制比为-53 d B。电路功耗仅为235 n W,芯片面积为0.01 mm2。

An ultra low power voltage reference based on the characteristics of the CMOS subthreshold region without resistors and bipolar junction transistor（ BJT） was presented for low power application-specific integrated circuits（ ASICs）. In order to reduce the power dissipation,an Oguey current reference source was used to reduce the static current. The MOSFET operated in linear region which instead of the ordinary resistors,was used to eliminate the impact of the mobility and current temperature,and decrease the chip area. The power supply rejection ratio（ PSRR） and the line regulation were reduced by a cascode current mirror. The circuit was simulated based on SMIC 0. 18 μm CMOS process.The simulation results show that the temperature coefficient of the voltage is 29. 1 × 10- 6/ ℃ in a range of- 45 ℃ to 130 ℃. The line regulation is 0. 056% in a supply voltage range of 0. 8 V to 3. 3 V,and PSRR is- 53 d B at 100 Hz. The power dissipation is only 235 n W. The chip area is 0. 01 mm2.