摘要
通过不同TFT几何结构验证ITO像素电极工序对于HADS产品TFT特性的影响。实验结果显示TN5mask与倒反HADS结构(源漏极→ITO像素电极)二者有比现行HADS结构(ITO像素电极→源漏极)更高的Ion,提升比率达到40%。推测主要原因为现行HADS结构(ITO像素电极→源漏极)在Si岛完成后进行ITO像素电极工序增加了N+与源漏极之间接触阻抗导致Ion降低。对于HADS产品,倒反HADS结构(源漏极→ITO像素电极)可以具有更好的TFT特性表现。对现行HADS结构,在沟道形成工序前的N+表面ITO残沙程度越少则Ioff越低;对于倒反HADS结构,沟道形成之后沟道表面ITO残沙程度对则对TFT特性没有明显影响。对于Poole-Frenkel区域,现行HADS结构(ITO像素电极→源漏极)比TN5mask与倒反HADS结构(源漏极→ITO像素电极)二者较低Ioff[Vg=-20V],下降达50%,主要为N+与源漏极之间接触阻抗增加的影响。
Effects of TFT structure on HADS product TFT properties was investigated.TN 5 mask and reversed HADS structure（SD →pixel ITO）shows higher Ionabout 40% than current HADS structure（pixel ITO →SD）.The lower Ionof current HADS structure（pixel ITO →SD）may result from higher N＋/SD contact resistance due to damaged N＋surface result from pixel ITO process on N＋surface.For current HADS structure,less ITO remain before channel formation leads to a lower Ioff,while it shows no effect on TFT characteristic as ITO remain stays on formed channel for reversed HADS structure（SD →pixel ITO）.The current HADS structure shows a 50% lower PooleFrenkel leakage current and lower Poole-Frenkel I-Vslope than TN 5mask and reversed HADS structure（SD →pixel ITO）also due to a higher N＋/SD contact resistance.
出处
《液晶与显示》
CAS
CSCD
北大核心
2016年第4期370-374,共5页
Chinese Journal of Liquid Crystals and Displays
