硅基与蓝宝石衬底上的GaN-LEDs性能差异分析

Discussion on difference of performance in GaN-LEDs on silicon and sapphire substrate

在简要阐述硅基与蓝宝石衬底的GaN研究与发展基础上,就此两种不同衬底上GaN-LEDs性能进行了对比分析,并对这两种衬底上的LED进行了相应的表征实验。通过AFM和XRD等分析手段揭示了器件的结构特性,对器件性能(I-V和EL以及I-L测试)进行了相应的评价。通过分析相关实验数据得出:在电学特性与光学性能两方面,蓝宝石衬底上的LED均优于硅衬底上的LED。

Basied on the research and development of gallium nitride using silicon and sapphire substrates,different device performances of GaN-LEDs grown on these two substrates have been compared and discussed.The corresponding experimental characterizations have been carried out.Firstly,the structural characteristics of device are revealed by means of XRD and AFM,and the performance of device was evaluated by I-V,EL,and I-L measurements.Finally,through the experimental data analyses,both the electrical and optical properties of the LEDs grown on the sapphire are superior to ones grown on the silicon substrate.