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Source of Low Frequency Noise in SiGe HBTs

Source of Low Frequency Noise in SiGe HBTs
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摘要 The performance of low frequency noise(LFN)in SiGe heterojunction bipolar transistors(HBTs)is presented.The experimental results indicate that the performance of LFN in SiGe HBTs agrees with classical LFN theory.Based on classical LFN theory,the source of LFN in SiGe HBTs is confirmed from Hooge modal and McWhorter model simultaneously.Furthermore,according to this results,the base current coefficient α is extracted and the relationship between current noise power spectral density and base current is also shown. The performance of low frequency noise（LFN）in SiGe heterojunction bipolar transistors（HBTs）is presented.The experimental results indicate that the performance of LFN in SiGe HBTs agrees with classical LFN theory.Based on classical LFN theory,the source of LFN in SiGe HBTs is confirmed from Hooge modal and McWhorter model simultaneously.Furthermore,according to this results,the base current coefficient α is extracted and the relationship between current noise power spectral density and base current is also shown.
作者 王凯 刘远 邓婉玲
机构地区 School of Information Science and Technology Science and Technology on Reliability Physics and Application of Electronic Component Laboratory
出处 《Journal of Donghua University(English Edition)》 EI CAS 2015年第6期1052-1054,共3页 东华大学学报（英文版）
关键词 SIGE HETEROJUNCTION BIPOLAR transistors(HBTs) low frequency noise SiGe heterojunction bipolar transistors（HBTs） low frequency noise
分类号 TN4 [电子电信—微电子学与固体电子学]
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参考文献15

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Journal of Donghua University(English Edition)
2015年 第6期

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