矩形槽二次电子产额的解析模型

Analytical Models of the Secondary Electron Yield from the Material Surface with Rectangular Grooves

二次电子发射现象由于在现代分析仪器及微波器件中的重要影响,一直以来是物理电子领域研究的基础和重点。表面形貌是影响材料二次电子发射特性的关键参量,但目前对于金属二次电子产额(secondary electron yield,SEY)与表面形貌之间的定量关系研究尚十分欠缺。矩形槽结构由于具有显著降低二次电子产额的特性,是加速器、高功率微波源等广泛应用的抑制结构,文章分析了表面结构特征对二次电子出射的遮挡作用和再入射过程,从理论上推导了电子正入射矩形槽结构时的二次电子产额。通过Monte Carlo模拟和实验结果的对比,所获得的解析模型均能很好的与仿真结果和实验结果相吻合。

Secondary electrons emission phenomenon is the basis and key point in the field of physical electronics for its influence on the modern analysis instruments and microwave devices. Surface topography plays an important role in secondary electron emission. Until now,there is still lack of an analytical model for the relationship between secondary electron yield（ SEY） and surface topography. Rectangular grooves which can sharply decrease the secondary electron yield,is widely used in the accelerator and high power microwave source. In this paper,the shielding effect of the surface structure is considered to be the main factor that affects SEY characteristics. And the analytical model is deduced to describe the quantitative relationship between the SEY and rectangular grooves parameters. The results calculated by the analytical model agree with the Monte Carlo simulation results and experiment data.