定量单轴压力下单晶硅片原位拉曼谱峰测试（英文）

In Situ Raman Spectrum Peak Test of Monocrystalline Silicon Wafer under Quantitative Uniaxial Pressure

测量获得了金刚石压腔系统中碳化钨基座单轴下的总压应力(F/N)-应变(ε/μm/m)关系:F=3.395ε+12.212(R^2=0.999 9),研制出可以在定量单轴压力下原位测试样品谱学特征的装置。利用该装置测试了单轴压力在2548.664 MPa下单晶硅片的拉曼谱峰。测试结果表明,当压力垂直于单晶硅样品[100]结晶面时,样品的519.12cm^(-1)谱峰随压力增大有规律的向高频方向偏移,谱峰频移量(Δω/cm^(-1))与压力(σ/MPa)的增加呈显著的线性关系,线性方程为σ=365.80Δω+10.19。式中的常数项在一定程度上反应了样品本身存在的残余应力;一次项系数与理论计算得到的结果存在一定差异,可能是由于本实验考虑了样品受力的定向性。Δω-σ线性关系式中的常数项可能代表两层含义:一是实验过程中存在的误差;二是在一定程度上反应了硅片本身存在的内应力的大小。

The relationship between total uniaxial stress（F/N）and strain（ε/μm/m）of wolfram carbide（WC）base in diamond anvil cell was measured：F=3.395ε＋12.212（R^2=0.999 9）,and a device was developed which can be used to test the spectral characteristics of the sample in situ under quantitative uniaxial pressure.The Raman spectrum peak of monocrystalline silicon wafer was tested by using this device under a uniaxial pressure up to 2 548.664 MPa.The test result shows that,when the pressure is perpendicular to [100]crystal plane of the monocrystalline silicon sample,the 519.12cm^（-1） peak shifts towards high frequency linearly with increasing pressure,and the linear relationship between shift amount of Raman spectrum peak frequency（Δω/cm^（-1））and pressure（σ/MPa）is：σ=365.80Δω＋10.19,wherein the constant may reflect the presence of residual stress in the sample to some extent,and some difference between monomial coefficient and the result of theoretical calculations may be due to sample stress orientation in this experiment.The constant in theΔω-σlinear relationship reflects experimental errors and the value of residual inner stress to some extent.