SiC BJT的单电源基极驱动电路研究

Single-Source Gate Driving Circuit for Si C Bipolar Junction Transistor

探究Si C BJT基极驱动电路拓扑,对Si C BJT基极驱动电路损耗的构成进行了分析和对比,提出单基极电阻和阻容网络两种单电源基极驱动方案,对开关速度进行了对比。针对单电源阻容网络驱动方案,对其关键电路参数进行了分析,并针对一款Si C BJT器件给出了优化的参数组合设计结果,实验测试得出驱动1 200 V/6 A Si C BJT驱动损耗为3.85 W,该驱动电路优势明显,并具有进一步优化的空间。

The topology of SiC BJT driving circuit is discussed. After analyzing and comparing the constitution of power loss of SiC BJT driving circuit,two single-supply driving circuits were presented,including single resistor and resistor-capacitor network. The switching speed of two driving schemes was compared. Then,for the single-supply resistor-capacitor network,the key circuit parameters were analyzed,and the optimized combinations of driving circuit parameters were given for a 1 200 V/6 A rating SiC BJT. The driving power loss of it is 3.85 W,and it has the space for the further optimization.