铋/铒共掺光纤荧光特性实验研究

Experimental Investigation on the Luminescence Properties of Bismuth/Erbium Co-doped Optical Fiber

分别用980nm和830nm的半导体激光器作为泵浦源激发铋/铒共掺光纤,采用前向和背向泵浦方式分析放大的自发辐射谱特性.实验结果表明：随着泵浦功率的增大,荧光强度显著增强.利用980nm半导体激光器,采用前向泵浦方式可激发以1 142nm和1 536nm为中心的两个辐射带,以1 142nm为最高辐射峰的3dB带宽是141nm,以1 536nm为最高辐射峰的3dB带宽是29nm.利用830nm半导体激光器,采用前向泵浦方式可激发以1 421nm为中心的荧光谱,3dB带宽是447nm.980nm和830nm激光器分别前向泵浦铋/铒共掺光纤时,随着光纤长度的增加,荧光先增强后减弱;分别背向泵浦铋/铒共掺光纤时,随着光纤长度的增加,荧光强度先逐渐增强后保持稳定.在25～80℃的温度范围内,铋/铒共掺光纤的荧光强度几乎不受温度的影响.使用980nm和830nm泵浦源同时激发铋/铒共掺光纤,结果表明铋/铒共掺光纤的发光中心具有相对独立性,发光范围存在部分重叠.

980nm and 830 nm semiconductor lasers were used as the pump source to excite Bismuth/Erbium co-doped optical fiber respectively,and the amplified spontaneous emission spectrum properties of forward and backward pump methods were analyzed.Experimental results show that the fluorescence intensity is significantly enhanced with increasing of the pumping power.By using 980 nm semiconductor laser,there are two obvious emission bands with the central wavelengths at 1 142 nm and 1 536 nm with the forward pump.The 3dB bandwidth with the center of 1 142 nm is 141 nm and,the 3dB bandwidth with the center of 1 536 nm is 29 nm.Using 830 nm semiconductor laser,the forward pump mode can excite the fluorescence spectrum with 1 421 nm as the center,and the 3dB bandwidth is 447 nm.When980nm and 830 nm semiconductor lasers pumped Bismuth/Erbium co-doped optical fiber forward respectively,luminescence intensity firstly increased and then decreased.When 980 nm and 830 nm semiconductor lasers pumped Bismuth/Erbium co-doped optical fiber backward respectively,luminescence intensity firstly increased and then remained stable.In the temperature range of 25~80℃,the fluorescence intensity of Bismuth/Erbium co-doped optical fiber is almost unaffected by the temperature.Using 980 nm and 830 nm semiconductor lasers to excited Bismuth/Erbium co-doped optical fiber at the same time,it is proved that the Bismuth activity centers are independent,and there is some overlap in the luminescence range.