抗辐射SRAM测试系统的设计与实现

Design and Implementation of Test System for Radiation Hardened SRAM

本文搭建了一种测试SRAM芯片耐电离辐射能力的系统。该系统可确定SRAM芯片在辐射环境下的最大抗总剂量率,也可为评价SRAM芯片的单粒子效应敏感性提供数据。该系统支持远程数据传输,可实时监测sram芯片的功耗,也可实时判断sram芯片读写功能正确与否。

The system for assessing the radiation hardened capacity of the SRAM chip has been builded in this paper. The system is used to determine the maximum radiationdose of the SRAM chip in the radiation environment, can also provide data for the sensitivity of single event effect. The system supports remote data transmission, real-time moni- toring of the SRAM chip power consumption, can be real-time judgment of the reading and writing functions both.