摘要
利用磁控溅射法在氧化铝陶瓷上制备了Cu、Cr/Cu以及Cr/Cr-Cu/Cu,采用台阶仪、XRD、SEM以及半导体测试仪对薄膜的厚度、结构、表面形貌以及电学特性进行了表征与测试,采用胶带法对薄膜的附着力进行了测试。结果表明,Cr缓冲层的存在对薄膜的特性有改善作用。未沉积缓冲时,薄膜结晶度不高,表面粗糙,致密度不高,附着力差。对不同的阻挡层进行比较,当选择了合适的缓冲层以及优化后的沉积工艺后,薄膜的结晶质量有所改善,表面光滑,致密度高,附着力良好。
Cu, Cr/Cu and Cr/Cr-Cu/Cu thin films were deposited on Al_2O_3 ceramic substrates by D.C. magnetron sputtering. The thicknesses, structures, surface appearance and the resistivity of the films were analyzed by step profiler, X- ray diffraction（XRD）, scanning electron microscope（SEM） and semiconductor tester. The peeling strength of the thin films was tested by 3M tapes. The results indicate that the Cr buffer layers can improve the properties of the thin films. Thin film without buffer layers exhibited poor properties, such as inferior crystalline, rough surface and lower peeling strength. The film with better properties could be obtained when pre-depositing proper buffer layers and choosing optimized technology.
出处
《电子工艺技术》
2016年第2期81-84,共4页
Electronics Process Technology
基金
装备预先研究基金项目(项目编号:51318070119)
关键词
薄膜
缓冲层
溅射
thin films
buffer layers
sputtering
