金属封装VDMOS器件常见封装缺陷及控制

Common Packaging Defects and Control Methods in Metal Packaging VDMOS Devices

金属封装VDMOS器件在军事以及航天领域应用广泛。芯片烧结、引线键合和平行缝焊是封装的三个主要工序,直接影响封装的成品率和器件长期可靠性。针对三大工序中常见的缺陷进行了描述和分析,并分别提出了控制措施和建议。

The Metal Packaging VDMOS Devices are widely used in military and space fields. The chip agglomeration, wire bonding and parallel seam welding are the three main processes, which will affect the finished product ratio and the long-term reliability. The common packaging defects were studied on the three main processes and the control methods were put forward.