辉光功率对柔性衬底ZnO:Al薄膜性能的影响

Effect of Sputtering Power on Properties of Flexible ZnO:Al Films

目前，磁控溅射制备ZnO：Al薄膜时的溅射压强较低，若氩气流量不稳或腔室排气口处气流扰动会对溅射压强产生较大影响，影响成膜质量。为提高溅射薄膜质量，采用直流磁控溅射技术，在较高溅射压强下，以不同辉光功率在柔性衬底聚酰亚胺上制备了ZnO：Al薄膜。采用紫外可见分光光度计、四探针测试仪、X射线衍射仪及扫描电镜测试薄膜性能，考察了辉光功率对薄膜光学特性、电学特性、薄膜结构和表面形貌的影响。结果表明：制备的薄膜均为六方纤锌矿结构，且有明显的C轴择优取向；随着辉光功率的增大，方块电阻先减小后增大，辉光功率为50w时最小，为15．6Ω，晶粒尺寸先增大后减小；在辉光功率为50w时，600～800nm波长范围内薄膜的相对透射率达到最大值96％。

The Al-doped ZnO(ZnO:Al) thin films were deposited by DC magnetron sputtering at higher sputtering pressure on flexible PI substrate.The UV- vis spectrophotometer,fourpoint probe,X-ray diffractometer and scanning electron microscope were used to evaluate the properties of thin films and study the influences of sputtering power on the optical property,electrical properly,membrane structure and surface morphology of films.Results showed that the prepared thin films were of hexagonal wurtzite structure,and had obviously preferred orientation along the c-axis.With the increase of sputtering power,the ohms per square first increased and then decreased,which had the minimum to 15.6 Ω at the sputtering power of 50 W,while the crystallite dimension initially increased and then decreased.Besides,when the sputtering power was 50 W,the relative transmittance of thin films was 96%in the range of 600~800 nm.