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Raman Scattering Modification in Monolayer ReS_2 Controlled by Strain Engineering

Raman Scattering Modification in Monolayer ReS_2 Controlled by Strain Engineering
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摘要 Regulation of optical properties and electronic structure of two-dimensionM layered ReS2 materials has attracted much attention due to their potential in electronic devices. However, the identification of structure transformation of monolayer ReS2 induced by strain is greatly lacking. In this work, the Raman spectra of monolayer ReS2 with external strain are determined theoretically based on the density function theory. Due to the lower structural symmetry, deformation induced by external strain can only regulate the Raman mode intensity but cannot lead to Raman mode shifts. Our calculations suggest that structural deformation induced by external strain can be identified by Raman scattering. Regulation of optical properties and electronic structure of two-dimensionM layered ReS2 materials has attracted much attention due to their potential in electronic devices. However, the identification of structure transformation of monolayer ReS2 induced by strain is greatly lacking. In this work, the Raman spectra of monolayer ReS2 with external strain are determined theoretically based on the density function theory. Due to the lower structural symmetry, deformation induced by external strain can only regulate the Raman mode intensity but cannot lead to Raman mode shifts. Our calculations suggest that structural deformation induced by external strain can be identified by Raman scattering.
出处 《Chinese Physics Letters》 SCIE CAS CSCD 2016年第4期89-92,共4页 中国物理快报(英文版)
基金 Supported by the National Natural Science Foundation of China under Grant Nos 61264008,61574080 and 61505085
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