摘要
We find extremely large low-magnetic-field magnetoresistance （~350% at 0.2 T and ~180% at 0.1 T） in germa- nium at room temperature and the magnetoresistanee is highly sensitive to the surface roughness. This unique magnetoelectric property is applied to fabricate logic architecture which could perform basic Boolean logic in- cluding AND, OR, NOR and NAND. Our logic device may pave the way for a high performance microprocessor and may make the germanium family more advanced.
We find extremely large low-magnetic-field magnetoresistance （~350% at 0.2 T and ~180% at 0.1 T） in germa- nium at room temperature and the magnetoresistanee is highly sensitive to the surface roughness. This unique magnetoelectric property is applied to fabricate logic architecture which could perform basic Boolean logic in- cluding AND, OR, NOR and NAND. Our logic device may pave the way for a high performance microprocessor and may make the germanium family more advanced.
基金
Supported by the National Natural Science Foundation of China under Grant Nos 11174169,11234007 and 51471093
