摘要
Epitaxial growth of InA1GaN/GaN structures are performed on the c-plane sapphire by pulsed metal organic chemical vapor deposition with different triethylgallium （TEGa） flows in the growth process of InA1GaN qua- ternary alloys. X-ray photoelectron spectroscopy results show that the A1/In ratio of the samples increases as the TEGa flows increase in the InAIGaN quaternary growth process. High-resolution x-ray diffraction results show that the crystal quality is improved with increasing TEGa flows. Morphology of the InA1GaN/GaN het- erostructures is characterized by an atomic force microscopy, and the growth mode of the InA1GaN quaternary shows a 21） island growth mode. The minimum surface roughness is 0.2Ohm with the TEGa flows equaling to 3.6 μool/rain in rms. Hall effect measurement results show that the highest electron mobilityμ is 1005.49 cm2/Vs and the maximal two-dimensional electron gas is 1.63 × 1013 em-2.
Epitaxial growth of InA1GaN/GaN structures are performed on the c-plane sapphire by pulsed metal organic chemical vapor deposition with different triethylgallium （TEGa） flows in the growth process of InA1GaN qua- ternary alloys. X-ray photoelectron spectroscopy results show that the A1/In ratio of the samples increases as the TEGa flows increase in the InAIGaN quaternary growth process. High-resolution x-ray diffraction results show that the crystal quality is improved with increasing TEGa flows. Morphology of the InA1GaN/GaN het- erostructures is characterized by an atomic force microscopy, and the growth mode of the InA1GaN quaternary shows a 21） island growth mode. The minimum surface roughness is 0.2Ohm with the TEGa flows equaling to 3.6 μool/rain in rms. Hall effect measurement results show that the highest electron mobilityμ is 1005.49 cm2/Vs and the maximal two-dimensional electron gas is 1.63 × 1013 em-2.
基金
Supported by the National Science and Technology Major Project of China under Grant No 2013ZX02308-002
the National Natural Science Foundation of China under Grant Nos 11435010,61474086 and 61334002
