以石墨烯为碳源对SiC纳米颗粒的制备和表征

Preparation and characterization of Si C nanoparticles with graphene as carbon source

采用石墨烯和Si粉为原材料,利用气固法在无催化剂的条件下成功制备出耐高温、抗氧化、抗辐射的宽带隙半导体材料——Si C纳米颗粒,并研究不同的煅烧条件对实验样品的影响。实验样品经X射线衍射(XRD)、扫描电子显微镜(SEM)、透射电子显微镜(TEM)以及拉曼光谱(Raman)等手段进行分析表征测试。结果表明,在没有催化剂参与的情况下,将石墨烯和Si粉置于石墨坩埚中,并抽真空10^(-3)Pa条件下成功制备了3C-Si C和2H-Si C混合晶型的纳米颗粒。

As a kind of wide band gap materials that can work in a hostile environment,Si Cnanoparticles have been prepared by making Si powder react with graphene under the condition of 10^（-3） Pa in the graphite crucible. The prepared samples have been characterized through XRD,Raman,TEM and SEM. The results show that under the vacuum of 10^（-3） Pa,the mixed crystal type of Si C including 2H-SiC and 3C-SiC has been prepared.