铜膜碘化法制备p型CuI薄膜及其用作空穴传输层的反型钙钛矿电池性能

p-type CuI Films Grown by Iodination of Copper and Their Application As Hole Transporting Layers for Inverted Perovskite Solar Cells

γ相碘化亚铜(γ-Cu I)是一种带隙为3.1 e V的p型半导体材料,适合应用于发光二极管和太阳能电池等光电子器件。本研究利用简单的铜膜碘化法制备了Cu I薄膜,探究了碘化时间、温度及铜/碘比等生长条件对其透明导电性能的影响。在最优碘化时间(30 min)和碘化温度(120℃)下,制备出了高透过率(可见光范围>75%)、导电性能好(电阻率4.4×10-2?·cm)的Cu I薄膜。利用Cu I薄膜作为空穴传输层,组装了Cu I/CH3NH3Pb I3/PCBM反型平面钙钛矿电池,获得的最高光电转换效率为8.35%,讨论了Cu I薄膜透明导电性能对钙钛矿电池光电转换效率的影响机理。

γ-phase copper iodide（γ-Cu I） is a wide bandgap p-type semiconductor with a band gap of 3.1 e V, which is suitable for optoelectronic devices like light-emitting diodes and solar cells. A simple and convenient method of iodination of copper film to prepare Cu I film was reported. The effects of iodination time, reaction temperature, and copper/iodine ratio on the transparent and conductive properties of Cu I film were explored. Cu I films with high transmittance over 75% in the visible range and low resistivity of 4.4×10^（-2） Ω·cm were grown under the optimized iodination time（30 min） and iodination temperature（120℃）. The Cu I films were adopted as hole transporting layers for Cu I/CH3NH3 Pb I3/PCBM inverted planar perovskite solar cell and a maximum photovoltaic efficiency of 8.35% was obtained. The influences of the transparent and conductive properties of Cu I films on the solar cell photovoltaic efficiency were also discussed.