混合模块及其应用

Hybrid Modules and Their Applications

SiC器件是下一代电力电子器件,目前价高难推广应用,在器件换代过渡期为增大功率及降低成本推出Si和SiC混合模块是现实的解决方案。除价格因素外,SiC器件的高开关速度导致开关过程电压和电流大幅振荡,也为应用带来很大困难,混合模块有助于克服这困难。介绍两种Si和SiC混合模块的应用:硅IGBT和碳化硅BCD混合模块及硅IGBT和碳化硅MOSFET混合模块。另外,还介绍全硅IGBT和MOSFET混合模块的应用,它也能获得Si-IGBT+SiC-MOSFET模块的许多好处。

SiC devices are the next generation power electronic devices, but they are difficult to be employed in applications owing to high cost. Developing Si ＋ SiC hybrid modules is a reasonable solution for reducing cost and increasing power rating of the devices in the period of changing device generation. Besides cost, high turn-on and turn-off speed, which cause serious voltage and current oscillation, bring difficulty to applications as well. The hybrid modules may help one to solve the difficulty. There were two kinds of Si ＋ SiC hybrid modules, Si-IGBT ＋ SiC-BCD hybrid module and Si-IGBT＋SiC-MOSFET hybrid module, and their applications were introduced. Additionally all-Silicon IGBT＋MOSFET hybrid module was introduced also, it may have many benefits of Si-IGBT＋SiC-MOSFET module.